표 1. | Table 1. 최신 V-대역 및 D-대역 증폭기 및 이중 대역 증폭기 비교 | Comparison of latest V-band, D-band, and dual-band amplifiers.

Reference		Tech	Topology	Freq (GHz)	Peak gain (dB)	BW3-dB (GHz)	Stage	Gain per stage (dB)	P1dB (dBm)	PDC (mW)
V-band amplifier	IMS 2023 [4]	22-nm FD-SOI	differential cs	63	20.4~23.4	13.6	3	6.8~7.8	−3~3.7	8.6~13.3
	IMS 2020 [5]	28-nm CMOS	single-ended cg & cascode	50	22.2	14.8	6	3.7	−11.8	25.6
	MTT 2019 [6]	40-nm CMOS	single-ended cs	55~65	19.8	10	3	6.6	2.8	18
D-band amplifier	RFIC 2024 [7]	40-nm CMOS	single-ended cs	140	18.4	16.5	3	6.1	1.7	17.1
	IMS 2023 [8]	40-nm CMOS	differential cs	115.7~139.7	19.7	24	5	4.8	−5.1	17.8
	TCAS I 2020 [9]	40-nm CMOS	single-ended cs	120	20.6	31.3	8	2.58	−3.1	45
Dual-band amplifier	IMS 2019 [10]	130-nm SiGe	single-ended cascode	28 / 60	16.2 / 15	7 / 15	1	16.2 / 15	15 / 17**	18.4 / 17.2
	MWCL 2019 [11]	130-nm SiGe	single-ended cascode	28 / 60	16.2 / 11.8	9 / 13.4	1	16.2 / 11.8	4.2 / 8	8.2 / 21
	TCAS II 2024 [12]	150-nm GaAs	single-ended cascode	26 / 48	12.5 / 14.5	7.5 / 6	1	12.5 / 14.5	2.3 / −2.7	14
	MWTL 2023 [13]	65-nm CMOS	single-ended cs	28 / 39	18.1 / 18.4	1.8 / 2.8	3	6.03 / 6.13	-	10.2
	MWTL 2024 [14]	65-nm CMOS	single-ended cs, cg, cascode	28 / 39	16.6 / 15	7.5 / 7.5	3	5.53 / 5	4.5 / −1.5	26.4
	This work	40-nm CMOS	single-ended cs	64 / 144	6.2 / 4.93	12.4 / 32.8	1	6.2 / 4.93	3.06 / 3.45*	13.2

Simulation result
Graphically estimated