표 2 이전에 보고된 정류기와 성능 비교 | Performance comparison with the previously reported rectifiers.

Ref.	Device	Circuit topology	Technique	Freq. (GHz)	Eff. (%)	Input RF power (dBm)
[4]	MA4E1317	Shunt diode	Harmonic control (Class-F)	5.8	79.8	17.65
[5]	MA4E2054	Shunt diode	2nd Harmonic control	5.8	65.8	19
[6]	HSMS286F	Miniaturized branch-line hybrid coupler(MBLHC)	Harmonic control	5.8	81	15
[7]	HSMS286B	Shunt diode	Optimizing output ripple, harmonic control	5.8	60.6	9
[8]	MA4E1317-1	4-stack voltage doubler	Harmonic control (Class-F), RF isolation network	5.8	73.1	27
[9]	HSMS2860	Series diode	Dual band impedance matching	5.8	51.5	10
[10]	HSMS286	Shunt diode	Dual band impedance matching	5.8	62.2	11
[11]	HSMS2850	Series diode	Dual band impedance matching	5.8	33.6	0
[12]	SMS-7630	Voltage doubler	Dual band impedance matching	5.8	39.2	1
[13]	GaN HEMT	Shunt diode	Optimizing bond-wire	0.915	61.2	39
[14]	GaN HEMT	Shunt diode	Optimizng diode	0.928	85.1	30.5
[15]	GaN HEMT	Shunt diode	-	5.78	44.8	41.1
This work	0.25 μm GaN HEMT	Voltage doubler	Harmonic control (Class-F)	5.8	69	32