표 1. | Table 1. D-대역 전력 증폭기 성능 비교표 | Performance comparison of recently published D-band power amplifiers.

Ref.	Technology	Freq. [GHz]	3-dB BW [GHz]	Fractional bandwidth [%]	Gain [dB]	Psat [dBm]	Peak PAE [%]	Supply [V]	Pdc [mW]	Area excluding pads [mm2]	FOM[7]**
[5]	45 nm CMOS FDSOI	152.5	17.5	11.5	18	8.8	6.8	1	92	0.04	78.7
[6]	40 nm CMOS	160	24	15	11.6	4.1	N/A	1	42	0.063	N/A
[7]	40 nm CMOS	133	13	9.7	16.8	8.6	7.4	1.1	89.1	0.3*	76.5
[8]	40 nm CMOS	140	17	12.1	20.3	14.8	8.9	1	305	0.34	87.5
[9]	65 nm CMOS	118	17	14.4	22.3	14.5	10.2	N/A	N/A	0.343	88.3
[10]	45 nm CMOS RFSOI	140	21	15	22.2	16	12.5	1	N/A	0.43	95.1
This work	40 nm CMOS	130	15	11.5	22.5	7.7	7.1	1	81	0.065	80.7

Chip area including pads.
FOM=P_sat[dBm]+Gain[dB]+20 log(freq[GHz])+10 log(PAE_MAX[%]).