표 1. | Table 1. 증폭기 성능 비교 | Comparison with other works.

Ref.	This work	[5]	[6]	[7]
Tech.	65 nm bulk CMOS	65 nm bulk CMOS	65 nm bulk CMOS	28 nm CMOS FD-SOI
Structure	Diff	Single to diff	Single	Single
Stage	2	3	3	3
3-dB BW	73~96	60~90	62.5~92.5	70.5~83.5
Gain [dB]	14.1	14.2	18.5	24
Gain/stage [dB]	7	4.73	6.17	8
IP1dB [dBm]	−9.3*	−10	−15	−26.8
OP1dB [dBm]	3.8*	3.2	2.5	−3.8
VDD[V]	1	1.8	1.8	1.6
Pdc [mW]	34	33.5	27	16
ESD	Yes	Yes	No	No
Area [mm2]	0.056	0.45**	0.06	0.14

Simulation results.
Area with including bondpads.