표 1. | Table 1.
저잡음 증폭기 성능 비교 | Comparison with other works.

Ref.	This work** (sim.)	[6]	[7]	[8]	[9]**
Tech.	65 nm CMOS	28 nm CMOS	55 nm CMOS	65 nm CMOS	65 nm CMOS
Structure	Single to diff	Diff	Diff	Single to diff	Single
Stage	2	3	3	4	3
Freq. [GHz]	75∼85	81∼91	66∼81	60∼90	62.5∼92.5
BW [GHz]	10	10	15	30	30
NF min. [dB]	4.8	5.17	5.09	6.3	5.5
Gain [dB]	17	25	11.8	14.2	18.5
Gain/stage [dB]	8.5	8.3	3.9	3.55	6.17
IP1dB[dBm]	−14	−32	−6.8	−11	−16.5
VDD [V]	1 & 2	0.6	1	1.8	1.8
Pdc [mW]	44.5	15	40	33.5	27
ESD	Yes	Yes	Yes	Yes	No
Area [mm2]	0.24	0.52	0.08*	0.455	0.06*

Area without including bondpads
Shunt-series transformer