표 1. | Table 1. 10 W GaN 전력증폭기 비교 | Comparison with 10 W GaN PAs.

Ref.	Device	Freq. (GHz)	FBW (%)	Center Freq. (GHz)	VDD, C, VDD, P (V)	Peak POUT (dBm)	DE at POUT (%)	DE at P6dB (%)	Technique
[14]	GaN	1.5～2.4	46.2	1.95	17.5, 30	42	5～67	42～61	Doherty PA
[15]	GaN	2.0～2.7	29.8	2.35	15, 28	41	36～65	58～70	*SPA-D
This work	GaN	0.6～1.0	50	0.8	28, 28	40.5～42.5	51.5～73.2	42.1～52.0	Asymmetric cell, resonance

SPA-D : Sequential power amplifier with Doherty-type active load modulation.