표 1. | Table 1. 측정 결과 비교 | Measurement comparison.

	Technology	Minimum insertion loss	RIN	Number of turns	Size
This work One segment autotransformer	CMOS 65 nm	−1.21 dB @3.0 GHz	9.5 Ω @3.0 GHz	2	0.22 mm2
This work Two segment autotransformer	CMOS 65 nm	−1.54 dB @3.0 GHz	6.1 Ω @3.0 GHz	3	0.22 mm2
Ref. [9] Two segment transformer	CMOS 0.18μm	−1.52 dB @1.7 GHz	5.3 Ω @1.7 GHz	4	0.53 mm2
Ref. [8] Reconfigurable transformer	InGaP/GaAs	−0.96 dB/−0.85 dB @2.4 GHz	7.7 Ω/21.1 Ω @2.4 GHz	4	0.82 mm2