표 6. | Table 6. 기존 발표된 back-to-back 마이크로스트립-HSIW 천이 구조 결과와 본 논문의 결과 비교 | Comparison of the previously published back-to-back microstrip-to-HSIW transition results and our work.

	This work	Ref. [9]	Ref. [12]
Frequency [GHz]	12～18	12～18	6.6～16.5
Return loss [dB]	≥ 15	≥ 20	≥ 13.5
Insertion loss [dB]	≤ 0.75	≤ 1.2	≤ 1.5
Length [mm]	55.5	51*	36*
Insertion loss per unit length [dB/mm]	≤ 0.0135	≤ 0.0235	≤ 0.0417
Substrate	RO4003C	RO4003C	RO5880
εr	3.55	3.55	2.20
tanδ	0.0027	0.0027	0.0009
Thickness [mm]	0.305	0.813	0.508

Estimated from the fabrication photograph