표 5. | Table 5. 기존 발표된 back-to-back 마이크로스트립-SIW 천이 구조 결과와 본 논문의 결과 비교 | Comparison of the previously published back-to-back microstrip-to-SIW transition results and our work.

	This work	Ref. [8]	Ref. [11]
Frequency [GHz]	12～18	12.4～18	8～15
Return loss [dB]	≥20	≥ 25	≥ 20
Insertion loss [dB]	≤ 1.7	≤ 0.8	≤ 1.0
Length [mm]	55.5	33*	24.8
Insertion loss per unit length [dB/mm]	≤ 0.0306	≤ 0.0242	≤ 0.0403
Substrate	RO4003C	RO6002	RO4003C
εr	3.55	2.94	3.55
tanδ @ 10 GHz	0.0027	0.0012	0.0027
Thickness [mm]	0.305	0.508	0.208

Estimated from the fabrication photograph