표 1. | Table 1. 위상천위기 성능 비교 | Comparison with other works.

Ref.	This work	Ref. [5]	Ref. [6]
Process	150-nm GaN	250-nm BiCMOS	22-nm FD-SOI CMOS
Topology	STPS	VP-APN	STPS
Freq. [GHz]	26.5-29.5	24-30	24-29.5
FBW [%]	10.7	22.2	20.5
No. of bit	6	2	4
Resolution [°]	5.625	45	22.5
IL [dB]	8.45±3.35	9±0.15	13.5±2.5
IL per bit [dB]	1.4	4.5	3.37
Return loss [dB]	> 8.91	> 10	> 7
RMS IL error [dB]	< 2.22	< 0.5	N/A
RMS PE [°]	< 4.54	< 5	< 5
Area [mm2]	3.45*	0.28	0.15

With RF and DC pad.