표 1. | Table 1. 기존 D-대역 저잡음 증폭기와의 성능 비교 | Comparison with previous D-band low-noise amplifiers.

Ref.	Tech.	Freq (GHz)	Gain (dB)	BW (GHz)	NF (dB)	PDC (mW)	Area (mm2)
[1]	CMOS SOI 45 nm	125.5∼157	16	31.5	8	75	0.37
[3]	CMOS 28 nm	104∼132	21.7	28	8.4	18	0.26
[6]	CMOS 65 nm	112∼128	22.4	16	11.4*	61	-
[7]	CMOS 40 nm	132∼147	15.6	15	8.8	18	0.21
This work	CMOS 28 nm	129∼149	17.8	20	7.6*	50.2	0.4

Simulation.