표 1. | Table 1. 전력 증폭기 성능 비교 | Performance comparison of state of art PAs.
| This work (simulation) | Ref. [3] | Ref. [4] | Ref. [5] |
Technology | 65-nm CMOS | 90-nm SiGe BiCMOS | 0.13-um SiGe | 0.18um CMOS |
3-dB BW [GHz] | 16∼25 | 22∼37 | 24∼30 | 18∼23 |
Gain [dB] | 22.6 | 17.4 | 23.6 | 22.5 |
Frequency [GHz] | 20 | 24 | 24 | 20 |
Supply [V] | 1.0 / 2.2 | 3 | 2 | 3.6 |
# of stages | 2 | 2 | 4 | 3 |
Psat [dBm] | 22 | 20.9 | 28.2 | 14.5 |
PAESAT [%] | 40.2 | 43.7 | 37.8 | 9.3 |
P1dB [dBm] | 21.5 | 20.6 | 26.6 | 16.2 |
PAEOP1dB [%] | 37.6 | 41.0 | 37.8 | - |
POUT@Linear [dBm] | 17.7** | 12.6* | 21.3* | - |
PAE@Linear [%] | 26** | 17.5* | 24.6* | - |
EVM 측정 결과.
IMD3 결과(IMD3 < −30 dBc).