표 1. | Table 1. CMOS 저잡음 증폭기 성능 비교 | Comparison with other K-band CMOS LNAs.
Ref. | This work (Sim.) | [3] | [4] | [5] | [6] |
Tech. | 65 nm CMOS | 65 nm CMOS | 6 5 nm CMOS | 0.18 um CMOS | 65 nm CMOS |
BW [GHz] | 17-23 | 17.2-22 | 21.2∼24 | 19∼22.0 | 22.45 |
NF min. [dB] | 2.31 | 3.3 | 3.6 | 4.1 | 3.4 |
RL [dB] | < −10 | < −10* | < −8 | - | < −11 |
Peak Gain [dB] | 19.5 | 14.9 | 19.1 | 13.2 | 20.46 |
IP1dB [dBm] | −16 | −24 | −31 | N/A | N/A |
VDD [V] | 1 | 1 | 0.3 | 0.6 | 1.1 |
Pdc [mW] | 16.9 | 1.9 | 0.99 | 7.1 | 12 |
ESD | Yes | N/A | N/A | N/A | N/A |
Area [mm2] | 0.27 | 0.39 | 0.35 | 1.36 | 0.38 |
Only input return loss plot