표 3. | Table 3. FEXT 기준 대칭/비대칭 마이크로스트립 라인의 확률적 예측 결과 비교 | Comparison of stochastic estimation results for symmetric/asymmetric microstrip line based on FEXT voltage.

Comparison point of FEXT voltage of symmetric line	Simulation result in Fig. 2(b)	MC mean	gPC mean	MC boundary	gPC boundary	Ratio of change|(MAX-min)/(mean)|
						MC	gPC
0.25 ns	−0.0016 V	−0.0016 V	−0.0016 V	−0.0052 V～0.0044 V	−0.0052 V～0.0042 V	412.50 %	412.50 %
0.35 ns	−0.1133 V	−0.1133 V	−0.1133 V	−0.1253 V～−0.0981 V	−0.1253 V～−0.0981 V	24.01 %	24.01 %
0.41 ns	−0.0092 V	−0.0092 V	−0.0093 V	−0.1048 V～−0.0049 V	−0.1048 V～−0.0049 V	1,085.87 %	1073.12 %
0.84 ns	−0.0018 V	−0.0018 V	−0.0017 V	−0.0086 V～0.0031 V	−0.0086V～0.0031 V	650.00 %	682.35 %
0.93 ns	−0.0054 V	−0.0054 V	−0.0054 V	−0.0099 V～0.0012 V	−0.0099 V～0.0012 V	205.56 %	205.56 %
0.99 ns	−0.0018 V	−0.0018 V	−0.0018 V	−0.0064 V～−0.0002 V	−0.0064 V～−0.0002 V	344.44 %	344.44 %
Comparison point of FEXT voltage of asymmetric line	Simulation result in Fig. 3(b)	MC mean	gPC mean	MC boundary	gPC boundary	Ratio of change|(MAX-min)/(mean)|
						MC	gPC
0.25 ns	−0.0012 V	−0.0012 V	−0.0011 V	−0.0036 V～0.0027 V	−0.0036 V～0.0026 V	525.00 %	563.64 %
0.35 ns	−0.0419 V	−0.0419 V	−0.0419 V	−0.0499 V～−0.0335 V	−0.0499 V～−0.0335 V	39.14 %	39.14 %
0.41 ns	−0.0042 V	−0.0042 V	−0.0042 V	−0.0470 V～−0.0024 V	−0.0470 V～−0.0024 V	1,061.90 %	1,059.52 %
0.78 ns	−0.0010 V	−0.0010 V	−0.0010 V	−0.0039 V～0.0001V	−0.003 9V～0.0001 V	400.00 %	400.00 %
0.88 ns	−0.0019 V	−0.0019 V	−0.0019 V	−0.0042 V～0.0003V	−0.0042 V～0.0003 V	236.84 %	236.84 %
0.94 ns	−0.0009 V	−0.0009 V	−0.0009 V	−0.0035 V～−0.0000V	−0.0035 V～−0.0000 V	388.89 %	388.89 %