표 2. | Table 2. NEXT 기준 대칭/비대칭 마이크로스트립 라인의 확률적 예측 결과 비교 | Comparison using stochastic estimation results for symmetric/asymmetric microstrip line based on NEXT voltage.

Comparison point of NEXT voltage of symmetric line	Simulation result in Fig. 2(b)	MC mean	gPC mean	MC boundary	gPC boundary	Ratio of change|(MAX-min)/(mean)|
						MC	gPC
0.35 ns	0.0562 V	0.0562 V	0.0562 V	0.0481 V～0.0662 V	0.0481 V～0.0661 V	30.79 %	30.59 %
0.54 ns	0.0519 V	0.0519 V	0.0519 V	0.0474 V～0.0643 V	0.0474 V～0.0643 V	32.56 %	30.44 %
0.63 ns	0.0298 V	0.0298 V	0.0298 V	0.0200 V～0.0502 V	0.0199 V～0.0502 V	101.08 %	101.08 %
0.69 ns	0.0072 V	0.0072 V	0.0072 V	0.0033 V～0.0299 V	0.0034 V～0.0297 V	366.18 %	364.71 %
1.17 ns	0.0019 V	0.0019 V	0.0019 V	0.0004 V～0.0041 V	0.0003 V～0.0040 V	205.88 %	205.88 %
Comparison point of NEXT voltage of asymmetric line	Simulation result in Fig. 3(b)	MC mean	gPC mean	MC boundary	gPC boundary	Ratio of change|(MAX-min)/(mean)|
						MC	gPC
0.35 ns	0.0158 V	0.0158 V	0.0157 V	0.0134 V～0.0192 V	0.0133 V～0.0193 V	36.71 %	38.22 %
0.56 ns	0.0173 V	0.0173 V	0.0172 V	0.0125 V～0.0249 V	0.0124 V～0.0246 V	71.68 %	70.93 %
0.63 ns	0.0046 V	0.0045 V	0.0046 V	0.0013 V～0.0206 V	0.0014 V～0.0206 V	428.89 %	417.39 %
0.67 ns	0.0019 V	0.0019 V	0.0019 V	0.0001 V～0.0161 V	0.0002 V～0.0161 V	842.11 %	836.84 %
1.13 ns	0.0011 V	0.0011 V	0.0010 V	0.0001 V～0.0024 V	0.0001 V～0.0024 V	209.09 %	230.00 %