표 2. | Table 2. C대역 GaN 고출력증폭기 집적회로의 성능비교 | Performance comparison of C-band GaN high power amplifier MMIC.

Parameter Unit Ref. [3] Ref. [4] This work
Process - 0.15 μm GaN HEMT 0.25 μm GaN HEMT 0.25 μm GaN HEMT
Frequency GHz 4.5~7 5.5~8.5 5~7.2
Small signal gain dB 33.5 32 29
Maximum Pout dBm 40.8 46 43.3
PAE % 42 40 48
MMIC size mm2 4.5156 (2.84×1.59) 17.2558 (3.61×4.78) 5.4 (3.0×1.8)
Pout density over MMIC size W/mm2 2.66 2.31 3.96